barrier capacitance

This paper presents a capacitance method which is based on that the resistivity of the material with uniform doping has an one-to one correspondence relation to the barrier capacitance when a junction at fixed biasing voltage is formed.

本文介绍一种基于固定偏压下，均匀掺杂材料的电阻率与其形成结时的势垒电容相对应的电容测量法。

The optimum numerical solution of the varactor model "anomalous change in P+-N junction's forward barrier capacitance" has been presented with CAD.

用计算机辅助设计，给出P~+-N结正向势垒电容异常变化的变容管模型的最佳值解。

The Optimization of the Varactor Model Anomalous Chang in P~+ N Junction's Forward Barrier Capacitance

P~+-N结正向势垒电容异常变化变容管模型的最佳化

Test and Data Processing of Emitter Junction Barrier Capacitance C Te of Transistor

晶体管发射极势垒电容C（Te）的测试及数据处理